1. product profile 1.1 general description a 600 w ldmos rf power transistor for bro adcast doherty transmitter applications. the excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. [1] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. [2] depending on selected channel. [3] depending on exciter used. 1.2 features and benefits ? high efficiency ? high power gain ? excellent ruggedness (vswr ? 40 : 1 through all phases) ? excellent thermal stability ? integrated esd protection ? one doherty design covers the full bandwidth from 470 mhz to 806 mhz ? internal input matching for ease of use ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? broadcast transmitter applications in the uhf band ? digital broadcasting blf888d; BLF888DS uhf power ldmos transistor rev. 1 ? 5 march 2014 objective data sheet table 1. application information rf performance at v ds = 50 v in an ultra wide doherty application. test signal f p l(av) g p ? d imd shldr par (mhz) (w) (db) (%) (dbc) (db) dvb-t (8k ofdm) 470 to 806 115 to 134 [2] 17 40 to 48 [2] ? 38 to ? 44 [3] 8 [1]
blf888d_BLF888DS all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all r ights reserved. objective data sheet rev. 1 ? 5 march 2014 2 of 10 nxp semiconductors blf888d; BLF888DS uhf power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect the reliability, for details refer to the on-line mtf calculator. table 2. pinning pin description simplified outline graphic symbol blf888d (sot539a) 1 drain1 (peak) 2 drain2 (main) 3 gate1 (peak) 4 gate2 (main) 5source [1] BLF888DS (sot539b) 1 drain1 (peak) 2 drain2 (main) 3 gate1 (peak) 4 gate2 (main) 5source [1] v \ p v \ p table 3. ordering information type number package name description version blf888d - flanged balanced ceramic package; 2 mounting holes; 4 leads sot539a BLF888DS - earless flanged balanced ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 104 v v gs gate-source voltage ? 0.5 +11 v t stg storage temperature ? 65 +150 ?c t j junction temperature [1] -225 ?c
blf888d_BLF888DS all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all r ights reserved. objective data sheet rev. 1 ? 5 march 2014 3 of 10 nxp semiconductors blf888d; BLF888DS uhf power ldmos transistor 5. thermal characteristics [1] measured under dc test condi tions, with peak section off. [2] measured in an ultra wide doherty application, usi ng a dvb-t (8k ofdm) signal, par (of output signal) at 0.01 % probability on ccdf; par of input si gnal = 9.5 db at 0.01 % probability on ccdf. 6. characteristics table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =75 ?c; v ds =50v; i ds = 2.7 a (main); i ds = 0 a (peak) [1] 0.27 k/w t case =90 ?c; v ds =50v; p l =115w; par=8db [2] 0.16 k/w table 6. dc characteristics t j =25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.4 ma 104 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 240 ma 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =50v - 0.061 2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -37-a i gss gate leakage current v gs =10v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) +3.75 v; i d =8.5a -120-m ? table 7. ac characteristics t j =25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit c iss input capacitance v gs = 0 v; v ds =50v; f=1mhz - 210 - pf c oss output capacitance v gs = 0 v; v ds =50v; f=1mhz - 70 - pf c rss reverse transfer capacitance v gs = 0 v; v ds =50v; f=1mhz - 1.3 - pf table 8. rf characteristics v ds =50v; i dq =1.3a; t case =25 ? c unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit test signal: 2-tone cw p l(av) average output power f 1 = 860 mhz; f 2 = 860.1 mhz - 250 - w g p power gain f 1 = 860 mhz; f 2 = 860.1 mhz 19 21 - db ? d drain efficiency f 1 = 860 mhz; f 2 = 860.1 mhz 43 45 - % imd3 third-order intermodulation distortion f 1 = 860 mhz; f 2 = 860.1 mhz - ? 32 ? 29 dbc test signal: pulsed cw p l(3db) output power at 3 db gain compression f = 860 mhz; t p = 100 ? s; ? =10% 540 580 - db
blf888d_BLF888DS all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all r ights reserved. objective data sheet rev. 1 ? 5 march 2014 4 of 10 nxp semiconductors blf888d; BLF888DS uhf power ldmos transistor 7. test information 7.1 ruggedness in doherty operation the blf888d and BLF888DS are capable of withstanding a load mismatch corresponding to vswr ? 40 : 1 through all phases under the following conditions: v ds = 50 v; f = 810 mhz at rated load power.
blf888d_BLF888DS all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2014. all r ights reserved. objective data sheet rev. 1 ? 5 march 2014 5 of 10 nxp semiconductors blf888d; BLF888DS uhf power ldmos transistor 8. package outline fig 1. package outline sot539a 5 ( ) ( 5 ( 1 & |